The Mu3e detector Vigani, L.; Rudzki, T.
Journal of instrumentation,
05/2022, Letnik:
17, Številka:
5
Journal Article
Recenzirano
Abstract
The Mu3e experiment searches for the lepton flavour violating decay
μ
→
eee
with an ultimate sensitivity of 1 event in 10
16
decays. This goal can only be achieved by reducing the material ...budget per tracking layer to
X
/
X
0
≈ 0.1%. For this purpose, the tracking detector is based on High Voltage Monolithic Active Pixel Sensors (HV-MAPS) thinned to 50 µm. The powering and data transmission is performed by means of polyimide-aluminum HDIs, which serve as mechanical support as well. The detector concept is presented, focusing on the technical aspects of the pixel tracker and the associated challenges.
Charge collection in irradiated HV-CMOS detectors Hiti, B.; Affolder, A.; Arndt, K. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
04/2019, Letnik:
924, Številka:
C
Journal Article
Recenzirano
Odprti dostop
Active silicon detectors built on p-type substrate are a promising technological solution for large area silicon trackers such as those at the High Luminosity LHC, but the radiation hardness of this ...novel approach has to be evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities in the range of 20–1000 Ωcm were irradiated with neutrons and protons up to a fluence of 2×1015neqcm−2 and 3.6×1015neqcm−2. Charge collection in passive test structures on the chip was evaluated using Edge-TCT and minimum ionising electrons from 90Sr. Results were used to assess radiation hardness of the detector in the given fluence range and to determine parameters of initial acceptor removal in different substrates.
•Irradiated samples of different initial resistivity between 20 and a few 1000 Ω cm.•Characterisation with edge transient current technique and 90Sr beta electrons.•Sensitive region increases after irradiation due to acceptor removal.•Parameters of acceptor removal estimated for neutron irradiation.•After proton irradiation larger sensitive region than after neutron irradiation.
Study of CMOS strip sensor for future silicon tracker Han, Y.; Zhu, H.; Affolder, A. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
11/2020, Letnik:
981, Številka:
C
Journal Article
Recenzirano
Odprti dostop
Monolithic silicon sensors developed with High-Voltage CMOS (HV-CMOS) processes have become highly attractive for charged particle tracking. Compared with the standard CMOS sensors, HV-CMOS sensors ...can provide larger and deeper depletion regions that lead to larger signals and faster charge collection. They can provide high position resolution, low material budget, high radiation hardness and low cost that are desirable for high performance tracking in harsh collision environment. Various studies have been conducted to explore the technology feasibility for the large-area tracking systems at future collider experiments.
CHESS (CMOS HV/HR Evaluation for Strip Sensor) sensor series have been developed as an alternative solution to the conventional silicon micro-strip detectors for the ATLAS inner tracker upgrade. The first prototype (named CHESS1) was to evaluate the diode geometry and the in-pixel analog electronics. Obtained test results were used to optimize the second prototype (named CHESS2). CHESS2 was implemented with a full digital readout architecture and realized as a full reticle sized monolithic sensor. In this paper, the basic characteristics of the CHESS2 prototype sensors and their performance in response to different input signals are presented.
Pixel sensors using 8′′ CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as ...well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 × 1015 neq cm−2. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation.
ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the ...conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120V. The TowerJazz 180nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.
Charge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types were designed and ...processed in 180 and 350 nm technology by AMS. Edge-TCT and charge collection measurements with electrons from super(90)Sr source were employed. Diffusion of generated carriers from undepleted substrate contributes significantly to the charge collection before irradiation, while after irradiation the drift contribution prevails as shown by charge measurements at different shaping times. The depleted region at a given bias voltage was found to grow with irradiation in the fluence range of interest for strip detectors at the HL-LHC. This leads to large gains in the measured charge with respect to the one before irradiation. The increase of the depleted region was attributed to removal of effective acceptors. The evolution of depleted region with fluence was investigated and modeled. Initial studies show a small effect of short term annealing on charge collection.
Current high energy particle physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip configurations, for their inner trackers. These detectors have proven to be very ...reliable and performant. Nevertheless, there is great interest in depleted CMOS silicon detectors, which could achieve a similar performance at lower cost of production. We present recent developments of this technology in the framework of the ATLAS CMOS demonstrator project. In particular, studies of two active sensors from LFoundry, CCPD_LF and LFCPIX, are shown.
This paper focuses on the performance of analog readout electronics (built-in amplifier) integrated on the high-voltage (HV) CMOS silicon sensor chip, as well as its radiation hardness. Since the ...total collected charge from minimum ionizing particle (MIP) for the CMOS sensor is 10 times lower than for a conventional planar sensor, it is crucial to integrate a low noise built-in amplifier on the sensor chip to improve the signal to noise ratio of the system. As part of the investigation for the ATLAS strip detector upgrade, a test chip that comprises several pixel arrays with different geometries, as well as standalone built-in amplifiers and built-in amplifiers in pixel arrays has been fabricated in a 0.35μm high-voltage CMOS process. Measurements of the gain and the noise of both the standalone amplifiers and built-in amplifiers in pixel arrays were performed before and after gamma radiation of up to 60Mrad. Of special interest is the variation of the noise as a function of the sensor capacitance. We optimized the configuration of the amplifier for a fast rise time to adapt to the LHC bunch crossing period of 25ns, and measured the timing characteristics including jitter. Our results indicate an adequate amplifier performance for monolithic structures used in HV-CMOS technology. The results have been incorporated in the next submission of a large-structure chip.
CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in ...luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of approximate2.4 and approximate2.8 for two active pixels on the test chip. There was also a notable increase in noise levels from 85 e super(-) to 386 e super(-) and from 75 e super(-) to 277 e super(-) for the corresponding pixels.
The LHC luminosity upgrade, known as the High Luminosity LHC (HL-LHC), will require the replacement of the existing silicon strip tracker and the transistion radiation tracker. Although a baseline ...design for this tracker exists the ATLAS collaboration and other non-ATLAS groups are exploring the feasibility of using CMOS Monolithic Active Pixel Sensors (MAPS) which would be arranged in a strip-like fashion and would take advantage of the service and support structure already being developed for the upgrade. Two test devices made with the AMS H35 process (a High voltage or HV CMOS process) have been subjected to various radiation environments and have performed well. The results of these tests are presented in this paper.
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