Nuclear forward scattering (NFS) is a suitable experimental technique to study the crystallization processes within amorphous alloys. It enables simultaneous investigation of both the structural ...arrangement and the associated hyperfine interactions. The presence of nanocrystals buried in amorphous matrix is usually manifested via their ferromagnetic exchange interactions. In weakly magnetic metallic glasses the onset of the phase transformation from amorphous to nanocrystalline state is not accompanied by occurrence of well distinguished magnetic hyperfine interactions due to the presence of newly formed nanocrystals. Here, we present evaluation of NFS time spectra acquired in-situ during the crystallization of weakly magnetic metallic glass with a composition of Fe75Mo8Cu1B16. We determine the onset of crystallization from the change in spectral line-widths of the NFS time spectra calculated in energy domain. Additional discussion of the crystallization process based on the evolution of hyperfine magnetic fields is presented, too.
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•Crystallization of weak magnetic amorphous alloy followed on line.•Structural relaxation unveiled bellow the first crystallization step.•Sophisticated local scale in-situ method of nuclear forward scattering was applied.•Onset of crystallization determined from the spectral line-width in energy domain.•Advanced analysis of nuclear forward scattering time spectra.
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•On-fly inspection of structural transformations during magnetic annealing.•Crystallization starts by ∼100K earlier during magnetic annealing.•Potential for modification of the ...material properties using magnetic field.•The whole crystallization process was followed with high time resolution.
Kinetics of the crystallization process of Fe–Mo–Cu–B-type metallic glass is studied to fine details during heat treatment under weak external magnetic field (0.652T). Structural arrangement as well as magnetic microstructure is followed on-fly using sophisticated method of in situ nuclear forward scattering (NFS) of synchrotron radiation. The latter provides both quantitative (relative fractions) and qualitative (hyperfine magnetic fields) temperature dependencies of all structurally different samples’ components. They belong to the amorphous residual matrix, the newly formed nanocrystalline grains, and to their surfaces, respectively. The onset of crystallization during in-field magnetic annealing starts ∼100K earlier than that in zero field.
We present a SEE and TID effect study of the novel monolithic pixel detector, X-CHIP-03, manufactured in a 180 nm SOI technology. The SEU cross section of the custom D flip-flops in the X-CHIP-03 ...ASIC has been evaluated using accelerated ions with LET ranging from 0.45 to 69 MeVċcm2ċmg−1. The global TID response of the X-CHIP-03 has been evaluated at a dose rate of 16.2 Gyċmin−1. The direct I-V measurements of transistor properties were made under identical radiation conditions using the predecessor X-CHIP-02 ASIC manufactured in the same technology, which contains the transistor testing matrices for TID measurements.
We present the SpacePix-D, a battery-operated standalone pixel detector with built-in LCD for real-time visualization of particle hits and Bluetooth for wireless access. The SpacePix-D allows the ...possibility of local and remote operation and it serves as a demonstrator for the new 180 nm SoI monolithic 64×64 pixel detection ASICs with hit counting and deposited energy measurement capability. Currently, it operates with the X-chip03 detection ASIC which can be upgraded to a new class of SpacePix pixel detectors. The SpacePix ASIC has been submitted for manufacturing and it was designed for charged particle sensing in the space environment. It features a logarithmic front-end amplifier response to cover a large required dynamic range for heavy ion detection and SEU-hardened digital circuits.
We present a proof-of-principle measurement of runaway electrons in a small tokamak using a silicon strip detector. The detector was placed inside the diagnostic port of the tokamak vessel and ...detected the runaway electron signal directly. The measured signal was compared to the signal provided by other tokamak diagnostics, especially the hard X-ray scintillation detector, which detects secondary photons created by interaction of accelerated electrons with tokamak walls (indirect detection of runaway electrons). The preliminary results show that when not saturated, direct detection with a segmented silicon strip detector provides promising new diagnostic information including spatial and temporal distribution of the runaway electron beam, and the measurement results are in good agreement with hard X-ray measurements with a scintillation detector.
In this work, we present a prototype of the Monolithic Active Pixel Sensor (MAPS) called X-CHIP-02 designed in 180 nm SOI CMOS technology. The selected technology has attractive features for ...fabrication of X-ray imaging sensors: 100 Ωċ cm handle wafer resistivity, thick epitaxial layer to suppress back-gate effect, support of high voltage devices and deep trench isolation. X-CHIP-02 has two pixel matrices with the pixel pitch of 50 μm and 100 μm with integrated 8-bit photon counting circuitry. Fine pitch SOI monolithic pixels imply small capacitance and thus small electronic noise of ≈50 e−. Design of the sensor chip and basic radiation imaging capabilities are described in this paper.
The front-end readout chip PH32, that is suitable for the measurement of {X-rays}, beta radiation and ions, is primarily dedicated to the dose rate measurement and basic spectroscopy. This article is ...focused on the Time-of-Flight (ToF) functionality used in particle tracking or ion mass spectroscopy. The PH32 chip was manufactured using a commercial 180 nm CMOS process and contains various possibilities for ToF measurements including Time-of-Arrival (ToA) counter in each individual measurement channel, a global ToA counter controlled by internal trigger logic and a trigger output with a proprietary differential signaling driver. Along with the energy measurement using the Time-over-Threshold (ToT) method, the time-walk effect of ToF may be corrected. The chip is optimized for the strip sensor capacitance of 8 pF with AC coupling and the electronic noise is established at 1100 e−. The measurements presented in this paper are focused on channel response to an injected charge including a measurement of the channel dispersion and the time-walk effect caused by the varying of the injected charge together with the results provided by the global ToA counter and the trigger output. A discussion of the ToF measurements made using a laser light source is presented for the individual channel counter and the global ToA counter including the time-walk effect correction.
The presented study compares the effects of ionizing radiation on circuit structures manufactured in a 180 nm bulk CMOS and 180 nm SoI CMOS technology. A high-flux 60Co medical radiation source with ...a dose rate of 460 Gyċmin−1 was used. The specimens under irradiation were placed in a Pb/Al enclosure providing an approximate electron equilibrium. Besides the analog and digital circuits, the ASICs also contain transistor test structures for direct study of irradiation effects upon electronics. The integral characteristics of current consumption, shifts in transistor threshold voltage and leakage current increase observations have been made. The SoI technology was shown to be several orders of magnitude more sensitive to TID effects, but during irradiation, its properties had a tendency to return to normal.
Abstract
The CALICE Semi-Digital Hadronic CALorimeter (SDHCAL) is the
first technological prototype in a family of high-granularity
calorimeters developed by the CALICE Collaboration to equip the
...experiments of future lepton colliders. The SDHCAL is a sampling
calorimeter using stainless steel for absorber and Glass Resistive
Plate Chambers (GRPC) as a sensitive medium. The GRPC are read out
by 1 cm× 1 cm pickup pads combined to a
multi-electronics. The prototype was exposed to hadron beams in
both the CERN PS and the SPS beamlines in 2015 allowing the test of
the SDHCAL in a large energy range from 3 GeV to 80 GeV. After
introducing the method used to select the hadrons of our data and
reject the muon and electron contamination, we present the energy
reconstruction approach that we apply to the data collected from
both beamlines and we discuss the response linearity and the energy
resolution of the SDHCAL. The results obtained in the two beamlines
confirm the excellent SDHCAL performance observed with the data
collected with the same prototype in the SPS beamline in 2012. They
also show the stability of the SDHCAL in different beam conditions
and different time periods.
A new type of X-ray imaging Monolithic Active Pixel Sensor (MAPS), X-CHIP-02, was developed using a 180 nm deep submicron Silicon On Insulator (SOI) CMOS commercial technology. Two pixel matrices ...were integrated into the prototype chip, which differ by the pixel pitch of 50 μm and 100 μm. The X-CHIP-02 contains several test structures, which are useful for characterization of individual blocks. The sensitive part of the pixel integrated in the handle wafer is one of the key structures designed for testing. The purpose of this structure is to determine the capacitance of the sensitive part (diode in the MAPS pixel). The measured capacitance is 2.9 fF for 50 μm pixel pitch and 4.8 fF for 100 μm pixel pitch at -100 V (default operational voltage). This structure was used to measure the IV characteristics of the sensitive diode. In this work, we report on a circuit designed for precise determination of sensor capacitance and IV characteristics of both pixel types with respect to X-ray irradiation. The motivation for measurement of the sensor capacitance was its importance for the design of front-end amplifier circuits. The design of pixel elements, as well as circuit simulation and laboratory measurement techniques are described. The experimental results are of great importance for further development of MAPS sensors in this technology.
