To take full advantage of recent and anticipated improvements in the performance of organic semiconductors employed in organic transistors, the high contact resistance arising at the interfaces ...between the organic semiconductor and the source and drain contacts must be reduced significantly. To date, only a small portion of the accumulated research on organic thin‐film transistors (TFTs) has reported channel‐width‐normalized contact resistances below 100 Ωcm, well above what is regularly demonstrated in transistors based on inorganic semiconductors. A closer look at these cases and the relevant literature strongly suggests that the most significant factor leading to the lowest contact resistances in organic TFTs so far has been the control of the thin‐film morphology of the organic semiconductor. By contrast, approaches aimed at increasing the charge‐carrier density and/or reducing the intrinsic Schottky barrier height have so far played a relatively minor role in achieving the lowest contact resistances. Herein, the possible explanations for these observations are explored, including the prevalence of Fermi‐level pinning and the difficulties in forming optimized interfaces with organic semiconductors. An overview of the research on these topics is provided, and potential device‐engineering solutions are discussed based on recent advancements in the theoretical and experimental work on both organic and inorganic semiconductors.
Though organic transistors have long been considered as a potential cornerstone technology for flexible electronics applications, their widespread commercialization in high‐frequency circuits has been substantially impeded by high contact resistance. A review of the state‐of‐the‐art reveals the pivotal role of the organic‐semiconductor morphology and the key challenges now to be overcome, such as Fermi‐level pinning and low charge‐carrier densities.
A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, ...high-capacitance gate dielectrics. One option is a hybrid dielectric composed of a thin film of aluminum oxide and a molecular self-assembled monolayer in which the aluminum oxide is formed by exposure of the surface of the aluminum gate electrode to a radio-frequency-generated oxygen plasma. This work investigates how the properties of such dielectrics are affected by the plasma power and the duration of the plasma exposure. For various combinations of plasma power and duration, the thickness and the capacitance of the dielectrics, the leakage-current density through the dielectrics, and the current-voltage characteristics of organic TFTs in which these dielectrics serve as the gate insulator have been evaluated. The influence of the plasma parameters on the surface properties of the dielectrics, the thin-film morphology of the vacuum-deposited organic-semiconductor films, and the resulting TFT characteristics has also been investigated.
Electrolyte-gated organic transistors (EGOTs) are promising candidates as a new class of neuromorphic devices in hardware-based artificial neural networks that can outperform their complementary ...metal oxide semiconductor (CMOS) counterparts regarding processing speed and energy consumption. Several ways in which to implement such networks exist, two prominent methods of which can be implemented by nanoscopic vertical EGOTs, as we show here. First, nanoscopic vertical electrolyte-gated transistors with a donor–acceptor diketopyrrolopyrrole–terthiophene polymer as an active material can be used to reversibly switch the channel conductivity over five orders of magnitude (3.8 nS to 392 μS) and perform switching at low operation voltages down to −1 mV. Second, nanoscopic EGOTs can also mimic fundamental synaptic functions, and we show an interconnection of up to three transistors, highlighting the possibility to emulate biological nerve cells.
The quantum anomalous Hall (QAH) effect-a macroscopic manifestation of chiral band topology at zero magnetic field-has been experimentally realized only by the magnetic doping of topological ...insulators1-3 and the delicate design of moiré heterostructures4-8. However, the seemingly simple bilayer graphene without magnetic doping or moiré engineering has long been predicted to host competing ordered states with QAH effects9-11. Here we explore states in bilayer graphene with a conductance of 2 e2h-1 (where e is the electronic charge and h is Planck's constant) that not only survive down to anomalously small magnetic fields and up to temperatures of five kelvin but also exhibit magnetic hysteresis. Together, the experimental signatures provide compelling evidence for orbital-magnetism-driven QAH behaviour that is tunable via electric and magnetic fields as well as carrier sign. The observed octet of QAH phases is distinct from previous observations owing to its peculiar ferrimagnetic and ferrielectric order that is characterized by quantized anomalous charge, spin, valley and spin-valley Hall behaviour9.
Divergent density of states offers an opportunity to explore a wide variety of correlated electron physics. In the thinnest limit, this has been predicted and verified in the ultraflat bands of ...magic-angle twisted bilayer graphene1-5, the band touching points of few-layer rhombohedral graphite6-8 and the lightly doped rhombohedral trilayer graphene9-11. The simpler and seemingly better understood Bernal bilayer graphene is also susceptible to orbital magnetism at charge neutrality7 leading to layer antiferromagnetic states12 or quantum anomalous Hall states13. Here we report the observation of a cascade of correlated phases in the vicinity of electric-fieldcontrolled Lifshitz transitions14,15 and van Hove singularities16 in Bernal bilayer graphene. We provide evidence for the observation of Stoner ferromagnets in the form of half and quarter metals10,11. Furthermore, we identify signatures consistent with a topologically non-trivial Wigner-Hall crystal17 at zero magnetic field and its transition to a trivial Wigner crystal, as well as two correlated metals whose behaviour deviates from that of standard Fermi liquids. Our results in this reproducible, tunable, simple system open up new horizons for studying strongly correlated electrons.
Individual graphene oxide sheets subjected to chemical reduction were electrically characterized as a function of temperature and external electric fields. The fully reduced monolayers exhibited ...conductivities ranging between 0.05 and 2 S/cm and field effect mobilities of 2−200 cm2/Vs at room temperature. Temperature-dependent electrical measurements and Raman spectroscopic investigations suggest that charge transport occurs via variable range hopping between intact graphene islands with sizes on the order of several nanometers. Furthermore, the comparative study of multilayered sheets revealed that the conductivity of the undermost layer is reduced by a factor of more than 2 as a consequence of the interaction with the Si/SiO2 substrate.
Moiré superlattices in atomically thin van der Waals heterostructures hold great promise for extended control of electronic and valleytronic lifetimes, the confinement of excitons in artificial moiré ...lattices and the formation of exotic quantum phases. Such moiré-induced emergent phenomena are particularly strong for interlayer excitons, where the hole and the electron are localized in different layers of the heterostructure. To exploit the full potential of correlated moiré and exciton physics, a thorough understanding of the ultrafast interlayer exciton formation process and the real-space wavefunction confinement is indispensable. Here we show that femtosecond photoemission momentum microscopy provides quantitative access to these key properties of the moiré interlayer excitons. First, we elucidate that interlayer excitons are dominantly formed through femtosecond exciton-phonon scattering and subsequent charge transfer at the interlayer-hybridized Σ valleys. Second, we show that interlayer excitons exhibit a momentum fingerprint that is a direct hallmark of the superlattice moiré modification. Third, we reconstruct the wavefunction distribution of the electronic part of the exciton and compare the size with the real-space moiré superlattice. Our work provides direct access to interlayer exciton formation dynamics in space and time and reveals opportunities to study correlated moiré and exciton physics for the future realization of exotic quantum phases of matter.
The realization of graphene-based, next-generation electronic applications essentially depends on a reproducible, large-scale production of graphene films via chemical vapor deposition (CVD). We ...demonstrate how key challenges such as uniformity and homogeneity of the copper metal substrate as well as the growth chemistry can be improved by the use of carbon dioxide and carbon dioxide enriched gas atmospheres. Our approach enables graphene film production protocols free of elemental hydrogen and provides graphene layers of superior quality compared to samples produced by conventional hydrogen/methane based CVD processes. The substrates and resulting graphene films were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and Raman microscopy, sheet resistance and transport measurements. The superior quality of the as-grown graphene films on copper is indicated by Raman maps revealing average G band widths as low as 18 ± 8 cm–1 at 514.5 nm excitation. In addition, high charge carrier mobilities of up to 1975 cm2/(V s) were observed for electrons in transferred films obtained from a carbon dioxide based growth protocol. The enhanced graphene film quality can be explained by the mild oxidation properties of carbon dioxide, which at high temperatures enables an uniform conditioning of the substrates by an efficient removal of pre-existing and emerging carbon impurities and a continuous suppression and in situ etching of carbon of lesser quality being co-deposited during the CVD growth.
Optimized materials and device design lead to record static and dynamic performance of organic thin-film transistors.
The primary driver for the development of organic thin-film transistors (TFTs) ...over the past few decades has been the prospect of electronics applications on unconventional substrates requiring low-temperature processing. A key requirement for many such applications is high-frequency switching or amplification at the low operating voltages provided by lithium-ion batteries (~3 V). To date, however, most organic-TFT technologies show limited dynamic performance unless high operating voltages are applied to mitigate high contact resistances and large parasitic capacitances. Here, we present flexible low-voltage organic TFTs with record static and dynamic performance, including contact resistance as small as 10 Ω·cm, on/off current ratios as large as 10
10
, subthreshold swing as small as 59 mV/decade, signal delays below 80 ns in inverters and ring oscillators, and transit frequencies as high as 21 MHz, all while using an inverted coplanar TFT structure that can be readily adapted to industry-standard lithographic techniques.
PDF
