Tout d'abord, Madame K-O dénonce l'illusion universaliste qui règne encore de nos jours (croyance que l'on communique à peu près de la même manière dans toutes les sociétés), entraînant de nombreux ...malentendus dans les échanges interculturels, et elle insiste sur le fait que la variation concerne tous les aspects du fonctionnement de l'interaction. Elle analyse ensuite dans le détail certains de ces aspects, de nature aussi bien verbale que non verbale : les distances (la « proxémique » de l'interaction), l'alternance des tours de parole, le marquage de la relation interpersonnelle, les actes de langage, les échanges rituels et le fonctionnement de la politesse dans la communication. Dans cette perspective, il s'agit de chercher la logique culturelle qui sous-tend les comportements communicatifs (par exemple : « Help yourself » comme formule de politesse en situation de visite aux Etats-Unis où se trouve valorisé le principe d'autonomie - politesse négative -, mais perçu comme impoli dans les sociétés où prédomine la politesse positive, fondée sur l'assistance ; le remerciement prenant la forme d'une excuse en japonais, et proscrit entre proches en coréen).
Brain arteriovenous malformations (BAVMs) are structurally unstable blood vessels that display an angiogenic phenotype, possibly maintained by concerted effects of key angiogenic factors. Therefore, ...we hypothesized that there are close correlations among key angiogenic factors in BAVMs and that levels of key angiogenic factors are associated with BAVM clinical characteristics that are linked with vascular instability.
We measured the expression of angiopoietin-2 (Ang-2), matrix metalloproteinase-9, vascular endothelial growth factor (VEGF), and platelet-derived growth factor-AA and -BB by use of enzyme-linked immunosorbent assay in 27 BAVM surgical specimens. Tissues were also collected from 14 structurally normal brain specimens obtained during epilepsy surgery.
Ang-2, VEGF, and matrix metalloproteinase-9 were highly expressed in BAVM samples (11.9 +/- 15.5 ng/mg protein, 137 +/- 102 pg/mg protein, and 379 +/- 455 pg/mg protein, respectively). Platelet-derived growth factor-BB was detectable in 7 of 21 BAVM samples. There were close correlations between Ang-2 and VEGF (R2 = 0.79). Higher Ang-2 and VEGF levels seemed to be associated with draining vein characteristics linked with BAVM hemorrhage but not with feeding artery pressure or BAVM size. In the structurally normal brain specimens, levels of Ang-2, VEGF, and matrix metalloproteinase-9 were low (0.8 +/- 2.3 ng/mg protein, 38 +/- 25 pg/mg protein, and 52 +/- 43 pg/mg protein, respectively).
There were close correlations among angiogenic factors in BAVMs. Concerted effects of angiogenic factors may maintain the angiogenic phenotype in BAVMs and thereby determine the clinical course of BAVMs.
To understand the prevalence of depression in HIV/AIDS patients who are receiving highly active antiretroviral therapy(HAART), and identify the influencing factors for depression.
A total of 180 ...HIV/AIDS outpatients receiving HAART were recruited in a cross-sectional survey at the first hospital of Changsha from June to December 2015. The SDS questionnaire(SDS score≥50)was used to screen depression patients and psychological CT was used to confirm the depression. The influencing factors were identified through multivariate logistic analysis.
Forty eight patients showed depressive symptoms in preliminary screening(26.67%), and 33 patients were diagnosed with depression(18.33%). HIV/AIDS related stigma and discrimination scale score 20-40(OR=0.093, 95%CI: 0.020-0.431)was the protective factors. Living alone(OR=5.062, 95% CI: 1.626-15.764), HIV related diseases in recent three months(OR=3.778, 95% CI: 1.113-12.826)were the risk factors.
More attention should be paid to the depression in HIV/AIDS patients receiving HAART. The mental health care for these patients needs to be improved in clinic practice.
In this work, the hot carrier injection (HCI) and negative bias temperature instability (NBTI) of a novel tunneling field effect transistor (TFET) manufactured by standard CMOS baseline platform is ...experimentally demonstrated. Results show that the reliability of the novel dopant segregated TFET (DS-TFET) is superior to the conventional MOSFET, and the reliability behavior of DS-TFET shows the similar temperature dependence to that of MOSFET. The proposed DS-TFET exhibits both excellent device performance and reliability, showing its great potential for ultra-low-power applications.
In this study, we present an embedded resistive random-access memory (RRAM) IP with superior reliability, which has been fabricated using a commercial 40nm High-Voltage (HV) CMOS technology. We ...designed short-loop test structures to successfully develop high-performance RRAM devices on this platform. The challenges associated with the drive circuit design using HV devices were addressed by introducing complementary output switch (COS) and power decoding (PWD). Additionally, a write driver-assisted current limiting(WDACL) strategy was developed for Forming, which effectively narrowed the post-Forming current distribution and reduce the device-to-device variation. Finally, chip-level test results showed that the RRAM IP can achieve a high endurance of 10K cycles and good retention of 37.5hrs at 175°C (equivalent to 10yrs at 85°C). Our RRAM IP is the first one on 40nm HV platform that reports both endurance and retention, which meets the requirement for applications like Display Driver IC (DDIC).
This work firstly demonstrates an ultra-low leakage microcontroller unit (MCU) based on 55nm tunnel FET (TFET) -CMOS hybrid 300mm foundry platform. By utilizing the large I ON and record high I ON /I ...OFF ratio of the dopant segregation TFET (DS-TFET), a 1Kbit TFET-Gated-Ground static random access memory (TGG-SRAM) is implemented in MCU always-on domain. A voltage-stacking scheme is proposed to regulate the supply voltage. Experimental results show that TGG-SRAM and TFET-MCU obtain order of magnitude standby power reduction, cost 6nA (data retention) and 75nA (deep-sleep mode) leakage current respectively, indicating the great potential of the TFET-CMOS hybrid platform for cutting-edge power-dieting MCU.
In this paper, to suppress the parasitic channel of sub-fin in vertically stacked gate-all-around (GAA) Si nanosheet FETs (NSFETs), the bottom dielectric isolation (BDI) was designed and simulated ...using TCAD simulation. The results show that the sub-threshold characteristics of the n-type NSFETs are improved by the BDI approach, and the gate capacitance is reduced by 16.98% compared with that of the NSFETs with sub-fin. In addition, the BDI technology can increase the process and electrical stability of the NSFETs.
In this paper, based on the via-first DD technology, we focus on the profile tuning of via and trench and the liner removal in order to optimize the trench profile. Via profile tuning include how to ...realize the via with the bowling profile, vertical profile and tapering profile. Trench profile tuning emphasizes the formation mechanism of bowling profile and top rounding profile. Footing profile and under-cutting profile of via bottom in liner open step is also addressed. The effect of different etching profiles on Rc, VBD (Breakdown Voltage) are examined. Results show that different via profiles have no impact on Rc, top-rounding trench-profile results in worse VBD, while under-cut & footing liner would deliver lower and higher Rc, respectively.
Negative bias temperature instability (NBTI) has been a major reliability issue for advanced CMOS technology. Significant drain-bias effect on NBTI has been demonstrated. In this paper, the ...correlation between drain-bias dependent NBTI and the interface trap (Nit) is studied. Charging pumping measurement was performed to monitor the Nit behavior and on-the-fly technique was used to measure the degradation and recovery behaviors of threshold voltage (ΔVth) in the pMOSFETs. The results show that significant NBTI degradation under higher drain bias can be owed to the drain bias enhanced generation of the non-recovered interfacial traps associated with Si-H bond breaking effect
