High-throughput DNA sequencing significantly contributed to diagnosis and prognostication in patients with myelodysplastic syndromes (MDS). We determined the biological and prognostic significance of ...genetic aberrations in MDS. In total, 944 patients with various MDS subtypes were screened for known/putative mutations/deletions in 104 genes using targeted deep sequencing and array-based genomic hybridization. In total, 845/944 patients (89.5%) harbored at least one mutation (median, 3 per patient; range, 0-12). Forty-seven genes were significantly mutated with TET2, SF3B1, ASXL1, SRSF2, DNMT3A, and RUNX1 mutated in >10% of cases. Many mutations were associated with higher risk groups and/or blast elevation. Survival was investigated in 875 patients. By univariate analysis, 25/48 genes (resulting from 47 genes tested significantly plus PRPF8) affected survival (P<0.05). The status of 14 genes combined with conventional factors revealed a novel prognostic model ('Model-1') separating patients into four risk groups ('low', 'intermediate', 'high', 'very high risk') with 3-year survival of 95.2, 69.3, 32.8, and 5.3% (P<0.001). Subsequently, a 'gene-only model' ('Model-2') was constructed based on 14 genes also yielding four significant risk groups (P<0.001). Both models were reproducible in the validation cohort (n=175 patients; P<0.001 each). Thus, large-scale genetic and molecular profiling of multiple target genes is invaluable for subclassification and prognostication in MDS patients.
Theory of ferromagnetic semiconductors Katayama-Yoshida, H.; Sato, K.; Fukushima, T. ...
Physica status solidi. A, Applications and materials science,
01/2007, Letnik:
204, Številka:
1
Journal Article, Conference Proceeding
In this letter, we present an amplifier module operating at a frequency of 0.48 THz. This represents almost a 50% increase in solid-state amplifier operating frequency compared to prior state of the ...art, and is the highest reported amplifier to date. The amplifier demonstrates a peak gain of 11.7 dB measured in a waveguide split-block housing. Sub 50-nm InP HEMT transistors with an estimated f MAX > 1 THz are used to achieve this level of performance. The five stage amplifier is realized in coplanar waveguide, and uses monolithically integrated dipole probes to couple the chip from the WR 2.2 waveguide.
In this letter, low noise amplification at 0.67 THz is demonstrated for the first time. A packaged InP High Electron Mobility Transistor (HEMT) amplifier is reported to achieve a noise figure of 13 ...dB with an associated gain greater than 7 dB at 670 GHz using a high f MAX InP HEMT transistors in a 5 stage coplanar waveguide integrated circuit. A 10-stage version is also reported to reach a peak gain of 30 dB. These results indicate that InP HEMT integrated circuits can be useful at frequencies approaching a terahertz.
Significance The development of system-independent and nonâmaterial-specific interfacial layers (IFLs) to facilitate efficient charge collection is of crucial importance for organic photovoltaic ...(OPV) cell performance. Here we report a broadly applicable IFL design strategy using solution-processed amorphous oxide semiconductors where their energetics can be tuned by varying the elemental composition without varying the surface chemistry. Based on the energetic requirements of specific organic active layers, these oxides can be readily designed with dialed-in energy levels. Using OPV solar cells as a test bed, we use a broad series of photoactive bulk heterojunction materials to demonstrate the effectiveness of these electronically tunable oxides for optimizing the performance of diverse OPV material sets.
In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductorâinorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.
Acute promyelocytic leukemia (APL) is a subtype of myeloid leukemia characterized by differentiation block at the promyelocyte stage. Besides the presence of chromosomal rearrangement t(15;17), ...leading to the formation of PML-RARA (promyelocytic leukemia-retinoic acid receptor alpha) fusion, other genetic alterations have also been implicated in APL. Here, we performed comprehensive mutational analysis of primary and relapse APL to identify somatic alterations, which cooperate with PML-RARA in the pathogenesis of APL. We explored the mutational landscape using whole-exome (n=12) and subsequent targeted sequencing of 398 genes in 153 primary and 69 relapse APL. Both primary and relapse APL harbored an average of eight non-silent somatic mutations per exome. We observed recurrent alterations of FLT3, WT1, NRAS and KRAS in the newly diagnosed APL, whereas mutations in other genes commonly mutated in myeloid leukemia were rarely detected. The molecular signature of APL relapse was characterized by emergence of frequent mutations in PML and RARA genes. Our sequencing data also demonstrates incidence of loss-of-function mutations in previously unidentified genes, ARID1B and ARID1A, both of which encode for key components of the SWI/SNF complex. We show that knockdown of ARID1B in APL cell line, NB4, results in large-scale activation of gene expression and reduced in vitro differentiation potential.
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