To construct large-scale silicon electro-optical switches for optical interconnections, we developed a method using a limited number of power monitors inserted at certain positions to detect and ...determine the optimum operating points of all switch units to eliminate non-uniform effects arising from fabrication errors. We also introduced an optical phase bias to one phase-shifter arm of a Mach-Zehnder interferometer (MZI)-type switch unit to balance the two operation statuses of a silicon electro-optical switch during push-pull operation. With these methods, a 32 × 32 MZI-based silicon electro-optical switch was successfully fabricated with 180-nm complementary metal-oxide-semiconductor (CMOS) process technology, which is the largest scale silicon electro-optical switch to the best of our knowledge. At a wavelength of 1520 nm, the on-chip insertion losses were 12.9 to 16.5 dB, and the crosstalk ranged from -17.9 to -24.8 dB when all units were set to the 'Cross' status. The losses were 14.4 to 18.5 dB, and the crosstalk ranged from -15.1 to -19.0 dB when all units were in the 'Bar' status. The total power consumptions of the 32 × 32 switch were 247.4 and 542.3 mW when all units were set to the 'Cross' and 'Bar' statuses, respectively.
MC-SCF wavefunctions for three endohedral Mn/Si clusters, Mnsub.2Sisub.10, Mnsub.2Sisub.12, and Mnsub.2Sisub.13sup.+, show evidence for strong static correlation, both in the Mn-Si bonds ('in-out ...correlation') and between the two Mn centers ('up-down correlation'). We use both Restricted and Generalized Active Spaces (RAS and GAS) to place constraints on the configurations included in the trial wavefunction, showing that, particularly in the high-symmetry cases, the GAS approach captures more of the static correlation. The important correlating pairs are similar across the series, indicating that the electronic structure of the endohedral Mnsub.2 unit is, to a first approximation, independent of the size of the silicon cage in which it is embedded.
Celotno besedilo
Dostopno za:
DOBA, IZUM, KILJ, NUK, PILJ, PNG, SAZU, SIK, UILJ, UKNU, UL, UM, UPUK
4.
Ultrathin Belorusov, D. A; Goldman, E. I; Chucheva, G. V
Journal of communications technology & electronics,
12/2022, Letnik:
67, Številka:
Suppl 1
Journal Article
Boron (B) is an essential micronutrient for plants, and its deficiency is a widespread nutritional disorder, particularly in high-demanding crops like Brassica napus. Over the past few decades, ...silicon (Si) has been shown to mitigate plant nutrient deficiencies of different macro- and micro-nutrients. However, the work on B and Si cross-talk has mostly been focused on the alleviation of B toxicity by Si application. In the present study, we investigated the effect of Si application on rapeseed plants grown hydroponically under long-term B deficiency (20 days at 0.1 µM B). In addition, a B-uptake labelling experiment was conducted, and the expression of the genes involved in B uptake were monitored between 2 and 15 days of B shortage. The results showed that Si significantly improved rapeseed plant growth under B deficiency by 34% and 49% in shoots and roots, respectively. It also increased the expression level of BnaNIP5;1 and BOR1;2c in both young leaves and roots. The uptake labelling experiment showed the remobilization of previously fixed sup.11B from old leaves to new tissues. This study provides additional evidence of the beneficial effects of Si under conditions lacking B by changing the expression of the BnaNIP5;1 gene and by remobilizing sup.11B to young tissues.
This study reviews soft errors in modern electronic assemblies, through silicon via (TSV), and low alpha-solder bumping techniques for 3-D microelectronic packaging. The TSV fabrication involves deep ...reactive ion-etching process of Si wafers to form vertical holes, which are further filled with copper and joined to solder bumps. The solder bumps in close proximity to Si die thus impose a serious threat of soft errors. These soft errors responsible for the malfunction of electronic systems have become a critical issue in miniaturized and high-density packaging, like 3-D packaging. Various low alpha-solder bumping techniques have been reported to minimize these errors in modern microelectronic devices. A low alpha-solder is one that has low levels of alpha-particle emission, as compared to the conventional solder. In addition, it improves the performance and reliability of the solder joints, prompting the need to adopt low alpha-solder for bumping in TSV packaging. Thus, this paper discusses the various aspects of TSV fabrication, functional layer deposition, Cu filling into TSV, and low alpha-solder bumping on TSV by solder ball reflow methods.
The characteristics of silicon-oxide layers deposited by various technological methods are compared. It is shown that the catalytic method for obtaining silicon-oxide layers by molecular layering has ...a number of advantages. The main advantages are a low growth temperature, high-quality interface with a silicon substrate, and high growth rate of films. Studies by cathodoluminescence made it possible to evaluate the structural quality of silicon-oxide layers produced by molecular layering and confirmed the potential of this method in obtaining high-quality silicon-oxide films for broad practical application.
In this paper, we investigated the electrical properties of a metal-induced laterally crystallized (MILC) p-type low-temperature polycrystalline-silicon thin-film transistor (LTPS-TFT) using ...high-Formula Omitted ZrTiO4 (ZTO) gate dielectric. With the orthorhombic-ZTO (111) preferred crystal system, the gate-stack with a low equivalent-oxide-thickness (EOT) of 4.1 nm and high permittivity of 50 achieve high dielectric quality by showing a low interfacial trap density (Formula Omitted of Formula Omitted cmFormula OmittedeVFormula Omitted near the mid-gap traps. From these results, the MILC p-type LTPS-TFT exhibits a record subthreshold slope of 80 mV/decade, which is attributed to the low Formula Omitted and EOT. In addition, the high-hole field-effect mobility of 250 cm2/Vsec at 1 MV/cm and high Formula Omitted ratio of Formula Omitted were observed. From the reliability evaluation, the degradation in the positive-bias stress, hot-carrier stress, and self-heating stress was dramatically superior to the conventional LTPS-TFT with SiO2 gate dielectric. These results confirm that the ZTO dielectric holds a great potential for the next-generation LTPS-TFTs.
BACKGROUND: The incorporation of silica within the plant cell wall has been well documented by botanists and materials scientists; however, the means by which plants are able to transport silicon and ...control its polymerization, together with the roles of silica in situ, are not fully understood. RECENT PROGRESS: Recent studies into the mechanisms by which silicification proceeds have identified the following: an energy-dependent Si transporter; Si as a biologically active element triggering natural defence mechanisms; and the means by which abiotic toxicities are alleviated by silica. A full understanding of silica formation in vivo still requires an elucidation of the role played by the environment in which silica formation occurs. Results from in-vitro studies of the effects of cell-wall components associated with polymerized silica on mineral formation illustrate the interactions occurring between the biomolecules and silica, and the effects their presence has on the mineralized structures so formed. SCOPE: This Botanical Briefing describes the uptake, storage and function of Si, and discusses the role biomolecules play when incorporated into model systems of silica polymerization as well as future directions for research in this field.
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