Temperature dependency of ballistic double gate tunnel field effect transistors (TFET) have been examined for the first time using Si and GaAs as channel material. I-V characteristics have been ...simulated using Kane's model of band-to-band tunneling (BTBT). It has been found that off current is more sensitive to temperature variation than on current. Moreover, this temperature dependency is also a function of device scaling which has been discussed in the present work. Besides a simple physical based model has been proposed that can predict the drain current with temperature over wide range (250K - 500 K for Si and 300K- 450K for GaAs).
Regardless of the fact that the confirmed Power Conversion Efficiency (PCE) of kesterite materials for photovoltaic cells is lower than that of other chalcogenide materials, there is still sign of ...improvement due to their high absorption rate, flexibility to have a tunable bandgap, abundance in nature, and so on.The primary objectives of this study was to assess the combined utilisation of quantum dots and quantum wells in kesterite material. This was achieved through three key approaches: firstly, by altering the quantity of quantum dots and wells present in the nanostructure; secondly, by modifying the composition of the dots and well material through adjustments in the Sulphur and Selenium ratio of CZTSSe. The third aspect to consider is the analysis of the effect of changes in operating temperature on high-performing nanostructures, building upon the information gathered from the previous two processes. Electrical properties such as PCE, <inline-formula><tex-math notation="LaTeX"> V_{oc}</tex-math></inline-formula>, <inline-formula><tex-math notation="LaTeX"> J_{sc}</tex-math></inline-formula>, and IV curve have been analyzed so that the performance of the hybrid structure can be examined. A quantum well and a quantum dot layer are both present in the p-i-n structure. The quantum dot layer is composed of ten quantum dots placed in an array. The effects of quantum dot thickness (5 and 10 nm) were also investigated. According to the findings, as few as three quantum dot layers and three quantum wells resulted in a 21% PCE. By varying the operating temperature between 250 K to 500 K, the temperature dependency of high-PCE structures was examined.
