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Qin, Yabo; Wang, Zongwei; Gao, Jiajun; Shan, Linbo; Wang, Qishen; Cai, Yimao; Huang, Ru
2023 Silicon Nanoelectronics Workshop (SNW), 2023-June-11Conference Proceeding
In this study, a high-speed and self-calibratable true random number generator (TRNG) is demonstrated based on a unified selector-RRAM device with dual switching modes. In fast selector mode (∼35 ns), the V th fluctuation is the entropy for the high-speed TRNG. However, V th has large device-to-device (D2D) variation, which leads to unstable switching probability. By adjusting the resistance of RRAM, the D2D variation of V th can be substantially regulated through self-calibration ( 10\times \sigma/\mu improvement), enabling the reliable deployment of TRNG.
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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in: SICRIS
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