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Spiesser, Aurelie; Dau, Minh-Tuan; Michez, Lisa A; Petit, Matthieu; Le Thanh, Vinh
ECS transactions, 01/2013, Letnik: 58, Številka: 9Journal Article
The Mn5Ge3 compound, thanks to its room-temperature ferromagnetism, metallic character and ability to epitaxially grow on germanium, has emerged as a potential candidate for spin injection into group-IV semiconductors. We investigate the effect of carbon doping in epitaxial Mn5Ge3 films and show that incorporation of carbon into interstitial sites of Mn5Ge3 can allow not only to enhance the magnetic properties but also increase the thermal stability of Mn5Ge3 up to a temperature as high as 850 °C. These results open perspectives to realize spintronic devices based on Mn5Ge3Cx/Ge heterostructures that are compatible with the Si-based complementary metal-oxide-semiconductor (CMOS) technology.
