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Tsai, Meng-Yen; Tarasov, Alexey; Hesabi, Zohreh R; Taghinejad, Hossein; Campbell, Philip M; Joiner, Corey A; Adibi, Ali; Vogel, Eric M
ACS applied materials & interfaces, 06/2015, Letnik: 7, Številka: 23Journal Article
Atomically thin molybdenum disulfide (MoS2) is a promising two-dimensional semiconductor for high-performance flexible electronics, sensors, transducers, and energy conversion. Here, piezoresistive strain sensing with flexible MoS2 field-effect transistors (FETs) made from highly uniform large-area films is demonstrated. The origin of the piezoresistivity in MoS2 is the strain-induced band gap change, which is confirmed by optical reflection spectroscopy. In addition, the sensitivity to strain can be tuned by more than 1 order of magnitude by adjusting the Fermi level via gate biasing.
