E-viri
Recenzirano
-
Ratti, L.; Brogi, P.; Collazuol, G.; Betta, G.-F. Dalla; Ficorella, A.; Marrocchesi, P. S.; Morsani, F.; Pancheri, L.; Torilla, G.; Vacchi, C.
IEEE transactions on nuclear science, 07/2020, Letnik: 67, Številka: 7Journal Article
Single-photon avalanche diodes (SPADs) fabricated using two different CMOS technologies were exposed to a neutron source up to a maximum fluence of <inline-formula> <tex-math notation="LaTeX">3\times 10^{11}\,\,1 </tex-math></inline-formula>-MeV neutron equivalent cm −2 . Significant changes in the dark count rate (DCR), with a strong dependence on the fluence and the device active area, were detected after irradiation. A model for the probability of DCR degradation, accounting for the source spectrum and the geometry of the device under test (DUT), was proposed and proved to be in good agreement with experimental data. The model may be helpful in performing worst-case analysis of SPAD-based detection systems under neutron irradiation.
Avtor
![loading ... loading ...](themes/default/img/ajax-loading.gif)
Vnos na polico
Trajna povezava
- URL:
Faktor vpliva
Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.
Leto | Faktor vpliva | Izdaja | Kategorija | Razvrstitev | ||||
---|---|---|---|---|---|---|---|---|
JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Baze podatkov, v katerih je revija indeksirana
Ime baze podatkov | Področje | Leto |
---|
Povezave do osebnih bibliografij avtorjev | Povezave do podatkov o raziskovalcih v sistemu SICRIS |
---|
Vir: Osebne bibliografije
in: SICRIS
To gradivo vam je dostopno v celotnem besedilu. Če kljub temu želite naročiti gradivo, kliknite gumb Nadaljuj.