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Yamamoto, A.; Hasan, T. Md; Kodama, K.; Shigekawa, N.; Kuzuhara, M.
physica status solidi (b), 05/2015, Letnik: 252, Številka: 5Journal Article
This paper reports the post‐growth annealing effects of low‐temperature grown Mg‐doped InGaN. By using MOVPE, 1 μm‐thick Mg‐doped InxGa1–xN (x ~ 0.36) films are grown at 570 °C. In order to activate the Mg acceptors, grown samples are treated by the conventional furnace annealing (FA) or the rapid thermal annealing (RTA). In the case of the FA at 650 °C for 20 min, the InGaN film is phase‐separated. On the other hand, the RTA at a temperature higher than 700 °C enables us to get p‐type samples. By using the RTA at 850 for 20 s, p‐type samples with a hole concentration 1018–1019 cm−3 are successfully obtained without phase separation.
