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Neudeck, Philip G.; Spry, David J.; Liangyu Chen; Prokop, Norman F.; Krasowski, Michael J.
IEEE electron device letters, 08/2017, Letnik: 38, Številka: 8Journal Article
Short-term demonstrations of packaged 4H-SiC junction field-effect transistor (JFET) logic integrated circuits (ICs) at temperatures exceeding 800 °C in air are reported, including a 26-transistor 11-stage ring oscillator that functioned at 961 °C ambient temperature believed unprecedented for electrical operation of a semiconductor IC. The expanded temperature range should assist temperature acceleration testing/qualification of such ICs intended for long-term use in applications near 500 °C ambient, and perhaps spawn new applications. Ceramic package assembly leakage currents inhibited the determination of some intrinsic SiC device/circuit performance properties at these extreme temperatures, so it is conceivable that even higher operating temperatures might be obtained from SiC JFET ICs by employing packaging and circuit design intended/optimized for T ≥ 800 °C.
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Vir: Osebne bibliografije
in: SICRIS
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