We report a vertical (001) <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 field-plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of <inline-formula> <tex-math notation="LaTeX">1.7~\mu {m} </tex-math></inline-formula> was used to enable a punch-through (PT) field profile and very low differential specific on-resistance (<inline-formula> <tex-math notation="LaTeX">\text{R}_{\text {on-sp}} </tex-math></inline-formula>) of 0.32 <inline-formula> <tex-math notation="LaTeX">\text{m}\Omega </tex-math></inline-formula>-cm 2 . The extreme permittivity field plate oxide facilitated the lateral spread of the electric field profile beyond the field plate edge and enabled a breakdown voltage (<inline-formula> <tex-math notation="LaTeX">{V}_{\textit {br}} </tex-math></inline-formula>) of 687 V. The edge termination efficiency increases from 13.2% for non-field plated structure to 61% for high permittivity field plate structure. The surface breakdown electric field was extracted to be 5.45 MV/cm at the center of the anode region using TCAD simulations. The high permittivity field plated SBD demonstrated a record high Baliga's figure of merit (BFOM) of 1.47 GW/cm 2 showing the potential of Ga 2 O 3 power devices for multi-kilovolt class applications.