E-viri
-
Kuhn, Kelin J.; Murthy, Anand; Kotlyar, Roza; Kuhn, Markus
ECS transactions, 10/2010, Letnik: 33, Številka: 6Journal Article
This paper discusses the historical role that SiGe has played in driving the CMOS scaling roadmap, including discussion of NMOS biaxial strain and PMOS uniaxial strain. The paper also discusses the potential future role that Ge or SiGe may play in CMOS scaling as a high mobility replacement for the Si channel. Challenges such as poor quality germanium oxide and the small Ge bandgap are reviewed in light of recent developments (high-k metal gate, and ultra-thin body devices) in MOSFET scaling.
![loading ... loading ...](themes/default/img/ajax-loading.gif)
Vnos na polico
Trajna povezava
- URL:
Faktor vpliva
Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.
Leto | Faktor vpliva | Izdaja | Kategorija | Razvrstitev | ||||
---|---|---|---|---|---|---|---|---|
JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Baze podatkov, v katerih je revija indeksirana
Ime baze podatkov | Področje | Leto |
---|
Povezave do osebnih bibliografij avtorjev | Povezave do podatkov o raziskovalcih v sistemu SICRIS |
---|
Vir: Osebne bibliografije
in: SICRIS
To gradivo vam je dostopno v celotnem besedilu. Če kljub temu želite naročiti gradivo, kliknite gumb Nadaljuj.