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Borselli, Matthew G; Eng, Kevin; Croke, Edward T; Maune, Brett M; Huang, Biqin; Ross, Richard S; Kiselev, Andrey A; Deelman, Peter W; Alvarado-Rodriguez, Ivan; Schmitz, Adele E; Sokolich, Marko; Holabird, Kevin S; Hazard, Thomas M; Gyure, Mark F; Hunter, Andrew T
arXiv.org, 06/2011Paper, Journal Article
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si.
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| JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP | |
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in: SICRIS
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