E-viri
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Ying-Chen Chen; Yao-Feng Chang; Fowler, Burt; Fei Zhou; Xiaohan Wu; Cheng-Chih Hsieh; Heng-Lu Chang; Chih-Hung Pan; Min-Chen Chen; Kuan-Chang Chang; Tsung-Ming Tsai; Ting-Chang Chang; Lee, Jack C.
2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 04/2016Conference Proceeding
Intrinsic unipolar SiOx-based Resistive-RAM (ReRAM) characteristics have been investigated. The cross-bar MIM structures have been examined under AC frequency response, by varying device area, temperature and current states. The results provide additional insights into the hopping/switching mechanisms. For the first time, by using SiOx/HfOx stacking engineering, we have developed a low-voltage operation (<; 2V) for SiOx-based ReRAM. The SiOx/HfOx stacking optimization not only maintains the RS behaviors even in air environment without any programming window degradation, but also further reduces the switching voltage below 2V.
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Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.
| Leto | Faktor vpliva | Izdaja | Kategorija | Razvrstitev | ||||
|---|---|---|---|---|---|---|---|---|
| JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP | |
Baze podatkov, v katerih je revija indeksirana
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| Povezave do osebnih bibliografij avtorjev | Povezave do podatkov o raziskovalcih v sistemu SICRIS |
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Vir: Osebne bibliografije
in: SICRIS
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