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Lundin, W. V.; Tsatsulnikov, A. F.; Rodin, S. N.; Sakharov, A. V.; Mitrofanov, M. I.; Levitskii, I. V.; Voznyuk, G. V.; Evtikhiev, V. P.
Semiconductors (Woodbury, N.Y.), 12/2019, Letnik: 53, Številka: 16Journal Article
The effect of the growth temperature and the flow of trimethylgallium on the process of selective epitaxy of gallium nitride in windows of submicron size have been studied. The conditions under which homogeneous nucleation and coalescence of nuclei are combined with a low growth rate are determined. The steady growth of variously oriented gallium nitride strips with a height of 50 nm and a width of 600 nm was realized.
