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  • Study of the crystal device...
    Kaloyan, A. A.; Tikhomirov, S. A.; Podurets, K. M.; Maisheev, V. A.; Sandomirskiy, Yu. E.; Chesnokov, Yu. A.

    Crystallography reports, 05/2017, Letnik: 62, Številka: 3
    Journal Article

    Currently, bent silicon single crystals are used at large accelerators to extract and collimate proton beams. A device for multiple deflection of a proton beam based on several bent silicon strips operating in the volume reflection mode has recently been developed. In this device, the bending of silicon strips successively located on the surface of a thick plate is implemented due to the internal stress induced by grooves mechanically formed on the crystal surface (Twyman effect). Topography based on angular scanning and synchrotron radiation was applied to measure the bending of individual deflector strips and the crystal as a whole. The measurement results are compared with the data obtained with a proton beam.