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Malevskaya, A. V.; Kalyuzhnyy, N. A.; Soldatenkov, F. Y.; Levin, R. V.; Salii, R. A.; Malevskii, D. A.; Pokrovskii, P. V.; Larionov, V. R.; Andreev, V. M.
Technical physics, 12/2023, Letnik: 68, Številka: 12Journal Article
Development of lift-off technique of AlGaAs/GaAs-heterostructures, grown by the Metalorganic vapour-phase epitaxy, to GaAs carrier-substrate using silver-containing paste or Au–In compound has been carried out. Forming process of frontal ohmic contact to GaAs n -type conductivity based on contact systems Au(Ge)/Ni/Au and Pd/Ge/Au with specific contact resistance (2–5) × 10 –6 Ω cm 2 has been investigated. Analyzed was the influence of heterostructure lift-off technique and forming process of frontal ohmic contact on the IR light-emitting diodes parameters: minimum light-emitting diodes (1 mm 2 square) series resistance was 0.16 Ω. Optical power 270 mW at current 1.5 A has been achieved.
