High-speed operational amplifiers are widely used in quantum-optical systems and equipment for recording fast pulses. The high level of parameters of such products is ensured by the use of modern technological routes for manufacturing microcircuits containing complementary bipolar transistors with a high cutoff frequency and a low parasitic collector capacitance. These technological routes for the manufacture of microcircuits are not available in Russia and Belarus. In order to meet the existing needs of the domestic market for radio-electronic equipment, two operational amplifiers on an MN2KhA031 master slice array (MSA) with unified stages and the possibility of changing the parameters by selecting the resistance of the current-conducting resistors and the capacity of the balancing capacitor are presented. The circuit diagrams are described and the results of the circuit modeling of two products are presented: a high-speed operational amplifier OAmp9 with a gain bandwidth product of more than 600 MHz, an output voltage rise rate of over 400 V/μs with the static parameters corresponding to general-purpose operational amplifier applications, and a precision low-noise OAmp10 amplifier with a gain of about 2 × 10 6 , an offset voltage of less than 50 μV, and a spectral noise floor relative to the input of about 1 nV/Hz 0.5 . The directions for further modernization of the developed amplifiers are formulated, especially, the reduction of the parasitic collector capacitance of transistors by design engineering, applying a reverse bias voltage, and the application of nonlinear correction circuits, which allow bringing the amplifiers’ performance in the large-signal mode closer to their performance in the low-signal mode.