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Epoletov, V. S.; Marichev, A. E.; Pushnyi, B. V.; Salii, R. A.
Technical physics letters, 12/2020, Letnik: 46, Številka: 12Journal Article
Results are reported of using subcontact layers with energy gap width E g of 0.35 to 0.8 eV for obtaining low-resistivity electrical contacts to p -InP. An experimental dependence of the contact resistance on E g of the subcontact material In x Ga 1 – x As was obtained.
