E-viri
Recenzirano
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Tsukada, Yusuke; Enatsu, Yuuki; Kubo, Shuichi; Ikeda, Hirotaka; Kurihara, Kaori; Matsumoto, Hajime; Nagao, Satoru; Mikawa, Yutaka; Fujito, Kenji
Japanese Journal of Applied Physics, 05/2016, Letnik: 55, Številka: 5SJournal Article
In this paper, we discusse the origin of basal-plane stacking faults (BSFs) generated in the homoepitaxial hydride vapor phase epitaxy (HVPE) growth of m-plane gallium nitride (GaN). We investigated the effects of seed quality, especially dislocation density, on BSF generation during homoepitaxy. The results clearly identify basal-plane dislocation in the seed as a cause of BSF generation. We realized high-quality m-plane GaN substrates with a 2-in. diameter using HVPE on low-dislocation-density m-plane seeds.
