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O'Rourke, Shawn M.; Venugopal, Sameer M.; Raupp, Gregory B.; Allee, David R.; Ageno, Scott; Bawolek, Edward J.; Loy, Douglas E.; Kaminski, Jann P.; Moyer, Curt; O'Brien, Barry; Long, Ke; Marrs, Michael; Bottesch, Dirk; Dailey, Jeff; Trujillo, Jovan; Cordova, Rita; Richards, Mark; Toy, Daniel; Colaneri, Nicholas
SID International Symposium Digest of technical papers, 05/2008, Letnik: 39, Številka: 1Journal Article
A low temperature, 180 °C, amorphous Si (a‐Si:H) process on bonded stainless steel substrates is discussed and a 3.8‐inch QVGA active matrix (AM) electrophoretic display as well as a 64×64 electrophoretic display with integrated column drivers are demonstrated. The n‐channel thin‐film transistors (TFTs) exhibited saturation mobilities of 0.7 cm2/V‐sec, median drive currents of 26.2 μA and low defectivity.
