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Yalandin, M. I.; Bochkarev, M. B.; Shunailov, S. A.; Sadykova, A. G.; Nasibov, A. S.; Bagramov, V. G.; Berezhnoi, K. V.; Vasil’ev, B. I.
Instruments and experimental techniques (New York), 09/2017, Letnik: 60, Številka: 5Journal Article
The results of the excitation of СdS semiconductor targets by a subnanosecond electron beam (EB) with an electron energy of 60–230 keV are presented. The maximum intensity of laser radiation from targets for a 1-mm EB diameter exceeded 10 7 W/cm 2 at an efficiency of ~10%. Lasing was initiated at the leading edge of the EB current; laser radiation then reproduced the shape of the excitation pulse. At low excitation levels, a single-mode lasing regime with the wavelength λ = 522 nm was observed. The maximum power of laser radiation (10 MW) was achieved on a multielement CdS semiconductor target. The duration of laser pulses changed in the range of 100–500 ps.
