The features of the manufacturing process, as well as the results of studies on the morphology, electrophysical, and photoelectric properties of photosensitive structures based on silicon containing siliconcarbide and porous silicon layers, are considered. A porous layer is created on the surface of a monocrystalline silicon substrate via electrolytic etching in fluorine-containing solutions. Wafers with a different surface microrelief such as a ground, polished, and textured one, has been used. The carbonization of the samples resulting in the formation of SiC/Si heterostructures has been carried out via gas transport endotaxy in a hydrogen flow using a vertical reactor with cold walls and a graphite container. The structure and composition of the manufactured SiC/Si heterostructures formed on different types of structured surfaces on polycrystalline and monocrystalline silicon, including the surface porous silicon layer, are investigated. It is shown that the process of endotaxy on all the types of surfaces leads to the formation of a single-crystal phase of silicon carbide by cubic modification. Using scanning and transmission electron microscopy, the morphology of the produced structures is investigated. Filiform entities with a different structure have been revealed on nonporous surfaces identified as silicon carbide, whereas the cylindrical or conical structures, whose nature is uncertain, have been observed on porous surfaces. The current-voltage and current-power curves are plotted for all types of manufactured structures, the general form of which indicates the presence of several potential barriers there. The photoelectric properties of the structures and the prospects of their use in photoelectric converters of solar cells are analyzed.