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  • High-Efficiency GaInP/GaAs ...
    Mintairov, S. A.; Malevskaya, A. V.; Mintairov, M. A.; Nakhimovich, M. V.; Salii, R. A.; Shvarts, M. Z.; Kalyuzhnyy, N. A.

    Technical physics letters, 12/2023, Letnik: 49, Številka: Suppl 2
    Journal Article

    Optimized photoconverters for operation under high-power laser radiation in the green-red spectral range based on MOCVD-grown GaInP/GaAs heterostructures are fabricated. The Au(Ge)/Ni/Au and Pd/Ge/Au contact systems have been studied to form the front contact grid of devices. As a result, the laser photoconverter with a Pd/Ge/Au contact showed an efficiency of more than 50% up to an incident radiation power density of 30 W/cm 2 with a maximum value of 54.4% under 7 W/cm 2 for laser line with wavelength of 600 nm.