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Sakharov, A. V.; Usov, S. O.; Rodin, S. N.; Lundin, W. V.; Tsatsulnikov, A. F.; Mitrofanov, M. I.; Levitskii, I. V.; Voznyuk, G. V.; Kaliteevskii, M. A.; Evtikhiev, V. P.
Semiconductors (Woodbury, N.Y.), 12/2019, Letnik: 53, Številka: 16Journal Article
The effect of annealing temperature and time on the luminescence intensity of the InGaN/GaN heterostructure subjected to ion beam etching was studied. We show that annealing at a temperature of 1100°C makes it possible to eliminate the radiation defects in the GaN layers that arise in the etching process with a focused Ga + ion beam (30 keV).
