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Polischuk, O. V.; Fateev, D. V.; Popov, V. V.
Semiconductors (Woodbury, N.Y.), 12/2018, Letnik: 52, Številka: 12Journal Article
The dependence of the plasmon terahertz resonant frequency in the generation mode on the quasi-Fermi energy in the active (ungated) region of graphene with an inverse charge carrier population and on the Fermi energy in the gated p - and n -type regions in a periodic p – i – n structure based on graphene with injection pumping is theoretically investigated. It is shown that electrically frequency-tunable nanoscale plasmon graphene amplifiers and generators operating in a broad terahertz frequency range at room temperature can be designed.
