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Glass, Stefan; Reis, Felix; Bauernfeind, Maximilian; Aulbach, Julian; Scholz, Markus R; Adler, Florian; Dudy, Lenart; Li, Gang; Claessen, Ralph; Schäfer, Jörg
Journal of physical chemistry. C, 05/2016, Letnik: 120, Številka: 19Journal Article
Preparation of SiC(0001) substrates is of high relevance to graphene growth. Yet, if only a smooth surface could be achieved, heteroepitaxy of many other two-dimensional materials comes into reach. Here we report a novel approach to hydrogen etching of SiC, based on stepwise ultrapure H exposure with slow substrate cooling rates. For the first time, the atomic evolution of the surface structure is witnessed by scanning tunneling microscopy. A detailed picture of the gas phase chemistry emerges, such as a zipper-like material desorption at step edges. The Si–C sheets are removed in layer-by-layer fashion, leading to large terraces with straight rims. The process ultimately results in an atomically smooth surface with complete H-passivation, with no detectable defect states in photoemission. The degree of perfection achieved suggests the use of this substrate as a versatile nanostructure template.
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in: SICRIS
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