Parameters of multi-row photodetectors (PDs) based on HgCdTe heteroepitaxial structures of different formats, including 288 × 4, 480 × 6, 576 × 4, and 576 × 6, with a step of 28 to 14 microns are studied. Owing to the choice of a N + / P -/ р -architecture, PDs operate at elevated temperatures in the time delay and integration (TDI) mode with the implementation of the analog mode of TDI and the replacement of defective elements directly in the readout LSI. The PDs are capable of forming high-definition images of the 768 × 576 format at a frame rate of 50 Hz in real time. For the multi-row PDs, high photoelectric parameters were obtained: the detection capacity at the maximum of the spectral sensitivity D * ≥ 5 × 10 12 cm W –1 Hz 1/2 at temperatures Т ~ 170–200 K and the number of working channels is not less than 99.0%.