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Budtolaev, A. K.; Kravchenko, N. V.; Khakuashev, P. E.; Chinareva, I. V.
Journal of communications technology & electronics, 03/2018, Letnik: 63, Številka: 3Journal Article
Methods for calculation and control of impurity difference dose Q а during the planar procedure of fabrication of avalanche photodiodes (APDs) based on heteroepitaxial InGaAs/InP structures are presented. The developed methods for the difference dose control in avalanche InGaAs/InP structures have been used at various stages of APD fabrication. It has been demonstrated that a tighter impurity dose control from the manufacturer of epitaxial structures, coordination of dose measurement procedures, and correction of diffusion processes for specific impurity doses are needed.
