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  • Liquid phase epitaxy growth...
    Witkiewicz-Lukaszek, S; Gorbenko, V; Zorenko, T; Sidletskiy, O; Arhipov, P; Fedorov, A; Mares, J. A; Kucerkova, R; Nikl, M; Zorenko, Y

    CrystEngComm, 01/2020, Letnik: 22, Številka: 21
    Journal Article

    This work is devoted to the development of two novel types of advanced composite scintillators based on single crystalline films (SCFs) of Lu 3 Al 5 O 12 garnet (LuAG), doped with Ce 3+ and Pr 3+ ions, and substrates from single crystals (SCs) of Sc 3+ doped LuAG using the liquid phase epitaxy (LPE) method. We show the possibility for simultaneous registration of α-particles and γ-quanta using separation of the decay kinetics of the SCF and crystal parts of such composite scintillators. Namely, large differences in the respective scintillation decay kinetics and decay time values t α and t γ are observed for LuAG:Ce SCF/LuAG:Sc SC and LuAG:Pr SCF/LuAG:Sc SC composite scintillators under excitation by α-particles from an 241 Am (5.5 MeV) source and γ-quanta from a 137 Cs (662 keV) source. Thus, both developed types of composite scintillators can be applied for simultaneous registration of α-particles and γ-quanta in mixed radiation fluxes. The rate of discrimination of the scintillation signals, coming from the SCF and SC parts of the LuAG:Ce SCF/LuAG:Sc SC composite scintillator, expressed by the t γ / t α ratio, is equal to 1.34-1.96 in the 0-1100 ns time interval. For the LuAG:Pr SCF/LuAG:Sc SC composite scintillators, more significant differences in the scintillation decay kinetics are achieved. In this case, the t γ / t α ratio for these composite scintillators reaches the values 9.6-15.6 in the wide 0-2500 ns time interval. This is the best result among all the types of composite scintillators we developed based on epitaxial structures of garnet compounds. Top - Scheme of the composite scintillator for registration of α-particles and γ-quanta. Bottom - Samples of the LuAG:Ce SCF/LuAG:Sc SC (a) and LuAG:Pr SCF/LuAG:Sc SC (b) composite scintillators prepared using the liquid phase epitaxy growth method.