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Mundy, J A; Schaab, J; Kumagai, Y; Cano, A; Stengel, M; Krug, I P; Gottlob, D M; Dog Anay, H; Holtz, M E; Held, R; Yan, Z; Bourret, E; Schneider, C M; Schlom, D G; Muller, D A; Ramesh, R; Spaldin, N A; Meier, D
Nature materials, 06/2017, Letnik: 16, Številka: 6Journal Article
Ferroelectric domain walls hold great promise as functional two-dimensional materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes local, diverging electrostatic potentials requiring charge compensation and hence a change in the electronic structure. These walls can exhibit significantly enhanced conductivity and serve as a circuit path. The development of all-domain-wall devices, however, also requires walls with controllable output to emulate electronic nano-components such as diodes and transistors. Here we demonstrate electric-field control of the electronic transport at ferroelectric domain walls. We reversibly switch from resistive to conductive behaviour at charged walls in semiconducting ErMnO . We relate the transition to the formation-and eventual activation-of an inversion layer that acts as the channel for the charge transport. The findings provide new insight into the domain-wall physics in ferroelectrics and foreshadow the possibility to design elementary digital devices for all-domain-wall circuitry.
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