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Colinge, J.-P.; Quinn, A.J.; Floyd, L.; Redmond, G.; Alderman, J.C.; Weize Xiong; Cleavelin, C.R.; Schulz, T.; Schruefer, K.; Knoblinger, G.; Patruno, P.
IEEE electron device letters, 02/2006, Letnik: 27, Številka: 2Journal Article
Evidence of one-dimensional subband formation is found at low temperature in trigate silicon-on-insulator MOSFETs, resulting in oscillations of the I/sub D/(V/sub G/) characteristics. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased. High mobility, reaching 1200 cm/sup 2//Vs, is measured in the subbands at T=4.4 K. Subband mobility decreases as temperature is increased. Conduction in subbands disappears for temperatures higher than 100 K or for drain voltage values that are significantly larger than kT/q.
