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  • 3D silicon pixel sensors: R...
    Hansson, P.; Balbuena, J.; Barrera, C.; Bolle, E.; Borri, M.; Boscardin, M.; Chmeissan, M.; Dalla Betta, G.-F.; Darbo, G.; Da Via, C.; Devetak, E.; DeWilde, B.; Su, D.; Dorholt, O.; Fazio, S.; Fleta, C.; Gemme, C.; Giordani, M.; Gjersdal, H.; Grenier, P.; Grinstein, S.; Hasi, J.; Helle, K.; Huegging, F.; Jackson, P.; Kenney, C.; Kocian, M.; Korolkov, I.; La Rosa, A.; Mastroberardino, A.; Micelli, A.; Nellist, C.; Nordahl, P.; Rivero, F.; Rohne, O.; Sandaker, H.; Silverstein, D.; Sjoebaek, K.; Slaviec, T.; Stupak, J.; Troyano, I.; Tsung, J.; Tsybychev, D.; Wermes, N.; Young, C.

    Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 02/2011, Letnik: 628, Številka: 1
    Journal Article

    The 3D silicon sensors aimed for the ATLAS pixel detector upgrade have been tested with a high energy pion beam at the CERN SPS in 2009. Two types of sensor layouts were tested: full-3D assemblies fabricated in Stanford, where the electrodes penetrate the entire silicon wafer thickness, and modified-3D assemblies fabricated at FBK-irst with partially overlapping electrodes. In both cases three read-out electrodes are ganged together to form pixels of dimension 50 × 400 μ m 2 . Data on the pulse height distribution, tracking efficiency and resolution were collected for various particle incident angles, with and without a 1.6 T magnetic field. Data from a planar sensor of the type presently used in the ATLAS detector were used at the same time to give comparison.