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Whitehouse, C.R.; Cullis, A.G.; Barnett, S.J.; Usher, B.F.; Clark, G.F.; Keir, A.M.; Tanner, B.K.; Lunn, B.; Hogg, J.C.H.; Johnson, A.D.; Lacey, G.; Spirkl, W.; Hagston, W.E.; Jefferson, J.H.; Ashu, P.; Smith, G.W.; Martin, T.
Journal of crystal growth, 1995, Letnik: 150, Številka: 1-4Journal Article, Conference Proceeding
The important value of the X-ray topography (XRT) technique for the investigation of III–V strained-layer relaxation processes is described. In addition to post-growth ex-situ XRT studies, a unique combined XRT/MBE growth facility has been constructed which allows the generation, motion and interaction of misfit dislocations to be monitored in-situ during epilayer growth, for the first time. The in-situ data already obtained for (100) InGaAs strained-layer growth on both Czochralski- and vertical-gradient freeze-grown GaAs substrates indicates technologically important differences in the initial relaxation process, including, in the latter case, the observation of a previously unreported secondary relaxation phase. Initial results relating to the influence of both post-growth annealing and the subsequent cool-down process are also described.
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