E-viri
Recenzirano
-
Peng, Jian; Fu, Liming; Sun, Yanle; Li, Ziyong; Ji, Xinbo; Shan, Aidang
Journal of materials science. Materials in electronics, 11/2020, Letnik: 31, Številka: 21Journal Article
Application of an electronic packaging material is always limited by its established coefficient of thermal expansivity (CTE) and poor plastic working capacity. Here, we explored that a ductile high-entropy alloy (HEA) could achieve adjustable CTE values via decomposing at 500 °C. The carbon-doped equiatomic FeCoCrNiMn HEAs (0.8, 1.0, and 1.3 at% C) decomposed into B2, L1 0 , M 23 C 6 and σ phases during annealing. The adjustable CTE of the carbon-doped HEAs can be ascribed to the relatively low CTE values of the formed B2, L1 0 , M 23 C 6 , and σ phases. The CTE value of a single face-centered cubic (FCC)-structured FeCoCrNiMn-1.3 at% C HEA is 16.7 × 10 –6 °C −1 , yet it can be continuously adjusted to 11.3 × 10 –6 °C −1 when the FCC matrix is gradually decomposed into the B2, L1 0 , M 23 C 6 , and σ phases. Furthermore, the decomposition rate and fractions of the B2, L1 0 , M 23 C 6 , and σ phases can be controlled via changing carbon concentration and rolling reduction. More importantly, the CTE range of the 1.3C HEAs meets the requirements of electronic packaging. This work provides a way to design HEAs with desirable CTE for electronic industry via annealing at intermediate temperature.
![loading ... loading ...](themes/default/img/ajax-loading.gif)
Vnos na polico
Trajna povezava
- URL:
Faktor vpliva
Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.
Leto | Faktor vpliva | Izdaja | Kategorija | Razvrstitev | ||||
---|---|---|---|---|---|---|---|---|
JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Baze podatkov, v katerih je revija indeksirana
Ime baze podatkov | Področje | Leto |
---|
Povezave do osebnih bibliografij avtorjev | Povezave do podatkov o raziskovalcih v sistemu SICRIS |
---|
Vir: Osebne bibliografije
in: SICRIS
To gradivo vam je dostopno v celotnem besedilu. Če kljub temu želite naročiti gradivo, kliknite gumb Nadaljuj.