Its radiation resilience has established p-type silicon as tracking detector baseline material in upcoming high-luminosity physics experiments. Electric isolation of n+ electrodes with p+ implants (p-stop or p-spray) is crucial for segmented p-type sensor quality. P+ doping concentration, implantation depth, and geometry determine the achievable resistance between segments. Typically, inter-strip resistance is measured directly on the strip sensors. Large resistances on the order of 100GΩ require precise, low-noise current measurements, which are strongly influenced by parasitic currents. To provide a comparably simple alternative to measurements on strip sensors, this contribution seeks to relate Metal-Oxide–Semiconductor Field-Effect Transistor (MOSFET) threshold voltage to sensor inter-strip resistance. We utilize circular MOSFET test structures fabricated on the same wafers as the strip sensors. This paper compares measurements of MOSFETs and strip sensors on wafers with different n- and p-spray implantations and presents comparative TCAD simulations. MOSFET test structures could present a fast option to judge silicon sensor inter-strip resistance and strip isolation properties. Process quality control during future series productions can benefit from this technique. •MOSFET structures are used to probe n-type silicon sensor inter-strip resistance.•Simulations and measurements for different n- and p-spray implantations are shown.•Relationship of MOSFET threshold voltage and inter-strip resistance is nonlinear.•Resistance and threshold voltage are sensitive to dopant implantation depth.•MOSFET measurements are useful for large-scale sensor process quality control.