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Kimoto, T.; Yonezawa, Y.
Materials science in semiconductor processing, 20/May , Letnik: 78Journal Article
Recent progress in the SiC material and ultrahigh-voltage devices is reviewed. Regarding the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal plane dislocations have made significant strides. Growth technology of 100μm-thick epitaxial layers intentionally doped to 1 × 1014cm−3 with a basal plane dislocation density of 0.1cm−2 has been established. The carrier lifetimes can remarkably be enhanced by several techniques and trials of lifetime control have been successful. Using very thick (> 100µm) and high-purity epitaxial layers, 15–27kV SiC pin diodes and various switching devices such as insulated gate bipolar transistors, thyristors, bipolar junction transistors, and metal-oxide-semiconductor field effect transistors have been demonstrated. Although the performance of these ultrahigh-voltage devices is promising, further improvement of the performance and reliability is mandatory for system applications. Technological challenges in both the material and device fabrication are discussed.
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Leto | Faktor vpliva | Izdaja | Kategorija | Razvrstitev | ||||
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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Vir: Osebne bibliografije
in: SICRIS
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