In this paper, high-performance bottom-gate thin-film transistors (TFTs) with transparent zinc oxide (ZnO) channels have been developed. The ZnO film for active channels was deposited by RF magnetron sputtering. The crystallinity of the ZnO film drastically improved when it was deposited on a doublelayer SiO x /SiN x gate insulator. In order to achieve a ZnO TFT back-plane for liquid-crystal display (LCD) with the required pattern accuracy, dry etching of the ZnO film in an Ar and CH 4 chemistry has been developed. The etching rate and tapered profile of the ZnO film could be controlled by the Ar content in the etching gases of Ar and CH 4 . The saturation mobility (mu sat ) of the ZnO TFT strongly depended on a gate voltage. A mu sat of 5.2 & cm 2 .(V .s) -1 at V GS = 40 V and V DS = 10 V, and an on/off-current ratio of 2.7 x 10 7 were obtained. A drain-current uniformity of plusmn7% was achieved within a radius of 20 mm from the substrate center. A 1.46 -in diagonal LCD with 61 600 pixels has been driven by the ZnO-TFT back-plane. A moving picture image was available on fabricated LCD driven by the ZnO TFTs.