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English, Chris D; Shine, Gautam; Dorgan, Vincent E; Saraswat, Krishna C; Pop, Eric
Nano letters, 06/2016, Letnik: 16, Številka: 6Journal Article
The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact resistance (R C). Here we present a systematic study of scaling MoS2 devices and contacts with varying electrode metals and controlled deposition conditions, over a wide range of temperatures (80 to 500 K), carrier densities (1012 to 1013 cm–2), and contact dimensions (20 to 500 nm). We uncover that Au deposited in ultra-high vacuum (∼10–9 Torr) yields three times lower R C than under normal conditions, reaching 740 Ω·μm and specific contact resistivity 3 × 10–7 Ω·cm2, stable for over four months. Modeling reveals separate R C contributions from the Schottky barrier and the series access resistance, providing key insights on how to further improve scaling of MoS2 contacts and transistor dimensions. The contact transfer length is ∼35 nm at 300 K, which is verified experimentally using devices with 20 nm contacts and 70 nm contact pitch (CP), equivalent to the “14 nm” technology node.
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