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Lin, Y.-M; Dimitrakopoulos, C; Jenkins, K.A; Farmer, D.B; Chiu, H.-Y; Grill, A; Avouris, Ph
Science (American Association for the Advancement of Science), 02/2010, Letnik: 327, Številka: 5966Journal Article
The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 100 gigahertz for a gate length of 240 nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that of state-of-the-art silicon transistors of the same gate length.
