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Li, Z. J; Yu, H. Y; Song, G. Y; Zhao, J; Zhang, H; Zhang, M; Meng, A. L; Li, Q. D
Physical chemistry chemical physics : PCCP, 02/2017, Letnik: 19, Številka: 5Journal Article
SiC@SiO 2 nanowires, as a functional nanocomposite, have attracted widespread attention due to their fascinating performance and broad application prospect. However, the low-cost, high yield preparation of large-scale SiC@SiO 2 nanowires is still a bottleneck, which hinders their industrial application. Herein, a carbothermal reduction strategy has been developed to synthesize SiC@SiO 2 nanowires, which breaks through the handicap of the traditional growth pattern that uses the aid of a substrate. Systematic characterization results illustrate that the yield of the as-obtained products greatly depends on the heating rate, and ten-gram scale SiC@SiO 2 nanowires (∼27.2 g) composed of a cubic β-SiC core and homogeneous amorphous SiO 2 coating are achieved under the optimum process parameters. The in situ mechanisms of expansion-insertion-growth and inhibition of expansion-package-obstruction are proposed to rationally interpret the growth process of SiC@SiO 2 nanowires and the effect of various heating rates, respectively. Furthermore, the SiC@SiO 2 nanowires display violet-blue photoluminescence and electromagnetic wave absorption properties. This study not only provides some beneficial suggestions for the commercial production of SiC@SiO 2 nanowires, but also reveals promising applications of SiC@SiO 2 nanowires in the optical and electromagnetic shielding fields. Moreover, the developed novel in situ growth mechanism enriches the growth theory of one-dimension nanomaterials and offers inspiration for their industrial-scale production. SiC@SiO 2 nanowires, as a functional nanocomposite, have attracted widespread attention due to their fascinating performance and broad application prospect.
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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