E-viri
Recenzirano
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Yuan-Chieh Chiu; Shu-Sheng Yu; Fang-Hao Hsu; Hong-Ji Lee; Nan-Tzu Lian; Tahone Yang; Kuang-Chao Chen; Chih-Yuan Lu
2012 SEMI Advanced Semiconductor Manufacturing ConferenceConference Proceeding
The TiN was conventionally used as barrier layers for both tungsten plug and AlCu metal lines. This paper reveals a novel back end of line (BEOL) self-aligned double patterning (SADP) technology, which applied TiN as a spacer material. The relative processes are introduced and discussed in detail. The new SADP approach was further applied for Cu damascene structure constructions in the advanced non-volatile memory (NVM).
