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Gorbenko, V; Zorenko, T; Paprocki, K; Riva, F; Douissard, P. A; Martin, T; Zhydachevskii, Ya; Suchocki, A; Fedorov, A; Zorenko, Yu
CrystEngComm, 01/2018, Letnik: 2, Številka: 7Journal Article
The study is dedicated to the development of scintillating screens for microimaging applications based on the single crystalline films (SCFs) of Eu 3+ -doped (Y,Lu,Gd,Tb)AlO 3 -mixed perovskites grown onto YAlO 3 substrates using the liquid phase epitaxy (LPE) method with the objective to optimize their X-ray stopping power and light yield. We confirm that the Eu 3+ -doped YAlO 3 and TbAlO 3 SCFs and full set of Lu 1− x Gd x AlO 3 SCFs with x values in the x = 0-1.0 range can be crystallized on YAlO 3 substrates using the LPE technique. The structural quality of films was studied using X-ray diffraction. The optical properties of Lu 1− x Gd x AlO 3 :Eu ( x = 0-1) SCFs and TbAlO 3 :Eu mixed perovskites were also studied in this work in comparison with YAlO 3 :Eu SCF counterpart using the absorption, cathodoluminescence, photoluminescence (PL) emission and excitation spectra and PL decay kinetics as well as light yield measurements under e-beam and α-particles excitation. The Gd 3+ → Eu 3+ and Tb 3+ → Eu 3+ energy transfer processes are observed in Lu 1− x Gd x AlO 3 and TbAlO 3 :Eu SCFs, respectively, increasing the efficiency of the Eu 3+ luminescence in the perovskite hosts. Meanwhile, the highest light yield of the cathodoluminescence (CL) and radioluminescence (RL) under excitation by α-particles is found only in YAlO 3 :Eu, Lu 0.5 Gd 0.5 AlO 3 :Eu and GdAlO 3 :Eu SCFs. The light yield of CL and RL of these SCFs is notably higher than that in TbAlO 3 :Eu and LuAlO 3 :Eu SCFs and they even slightly (9-11%) overcome the light yield of the conventional Gd 3 Ga 5 O 12 :Eu SCF screens that are used in the microimaging detectors. The study is dedicated to the development of scintillating screens for microimaging applications based on the single crystalline films of Eu 3+ -doped (Y,Lu,Gd,Tb)AlO 3 -mixed perovskites using the liquid phase epitaxy method.
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