Currently, 2D nanomaterials-based resistive random access memory (RRAMs) are explored on account of their tunable material properties enabling fabrication of low power and flexible RRAM devices. In this work, hybrid MoS2-GO based active layer RRAM devices are investigated. A facile hydrothermal co-synthesis approach is used to obtain the hybrid materials and a cost-effective spin coating method adopted for the fabrication of Ag/MoS2-GO/ITO RRAM devices. The performance of the fabricated hybrid active layer RRAM device is analysed with respect to change in material properties of the synthesized hybrid material. The progressive addition of 0.5, 1.5, 2.5 and 4.5 weight % of GO to MoS2, results in a hybrid active layer with higher intermolecular interaction, in the case of Ag/MoS2-GO4.5/ITO RRAM device, resulting in a unipolar resistive switching RRAM behavior with low SET voltage of 1.37 V and highIon/Ioffof 200 with multilevel resistance states. A space charge limited conduction mechanism is obtained during switching, which may be attributed to the trap states present due to functional groups of GO. The increased number of conduction pathways on account of both Ag+ions and oxygen vacancies (Vo2+), participating in the formation of conducting filament, results in higherIon/Ioff. This is the first report of unipolar Ag/MoS2-GO/ITO RRAM devices, which are particularly important in realizing high density crossbar memories for neuromorphic and in-memory computing as well as enabling flexible 2D nanomaterials-based memristor applications.Currently, 2D nanomaterials-based resistive random access memory (RRAMs) are explored on account of their tunable material properties enabling fabrication of low power and flexible RRAM devices. In this work, hybrid MoS2-GO based active layer RRAM devices are investigated. A facile hydrothermal co-synthesis approach is used to obtain the hybrid materials and a cost-effective spin coating method adopted for the fabrication of Ag/MoS2-GO/ITO RRAM devices. The performance of the fabricated hybrid active layer RRAM device is analysed with respect to change in material properties of the synthesized hybrid material. The progressive addition of 0.5, 1.5, 2.5 and 4.5 weight % of GO to MoS2, results in a hybrid active layer with higher intermolecular interaction, in the case of Ag/MoS2-GO4.5/ITO RRAM device, resulting in a unipolar resistive switching RRAM behavior with low SET voltage of 1.37 V and highIon/Ioffof 200 with multilevel resistance states. A space charge limited conduction mechanism is obtained during switching, which may be attributed to the trap states present due to functional groups of GO. The increased number of conduction pathways on account of both Ag+ions and oxygen vacancies (Vo2+), participating in the formation of conducting filament, results in higherIon/Ioff. This is the first report of unipolar Ag/MoS2-GO/ITO RRAM devices, which are particularly important in realizing high density crossbar memories for neuromorphic and in-memory computing as well as enabling flexible 2D nanomaterials-based memristor applications.