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Kaneko, M.; Tsibizov, A.; Kimoto, T.; Grossner, U.
IEEE transactions on electron devices, 04/2023, Letnik: 70, Številka: 4Journal Article
Lateral p-i-n diodes with small i-region width (less than <inline-formula> <tex-math notation="LaTeX">5 ~\mu \text{m} </tex-math></inline-formula>) were fabricated by direct ion implantation into a high-purity semi-insulating silicon carbide (SiC) substrate. The breakdown voltage of the diodes increased with increasing the i-region width and a lateral effective breakdown electric field of 1.7-1.9 MV/cm was obtained. The experimental breakdown voltage well agreed with the technology computer-aided design (TCAD) simulation, indicating that deep levels contributing the semi-insulating property do not seriously deteriorate the breakdown voltage in case of the small i-region width.
