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Park, Byungchoul; Choi, Hyun-Seung; Jeong, Jinwoong; Kim, Taewoo; Lee, Myung-Jae; Chae, Youngcheol
IEEE journal of solid-state circuits, 11/2023, Letnik: 58, Številka: 11Journal Article
This article presents a <inline-formula> <tex-math notation="LaTeX">400\ttimes 200</tex-math> </inline-formula> single-photon avalanche diode (SPAD) X-ray detector that supports seamless global shutter operation. The pixel consists of an SPAD with two time-encoded extrapolation counters. For use under low X-ray dose conditions, the pixels and readout circuitry operate in a fully digital manner, avoiding the noise penalty of the readout. Under high X-ray dose conditions, the proposed counter operates in the extrapolation mode and thus achieves a high dynamic range (HDR), while reducing the counter's power consumption. This is achieved by capturing the time of the counter overflow (<inline-formula> <tex-math notation="LaTeX">T_{\rm OF}</tex-math> </inline-formula>) and expanding the counter depth by the ratio between the integration time (<inline-formula> <tex-math notation="LaTeX">T_{\rm INT}</tex-math> </inline-formula>) and <inline-formula> <tex-math notation="LaTeX">T_{\rm OF}</tex-math> </inline-formula>. To reconstruct <inline-formula> <tex-math notation="LaTeX">T_{\rm OF}</tex-math> </inline-formula>, a <inline-formula> <tex-math notation="LaTeX">\phi_{\rm GCLK}</tex-math> </inline-formula> signal is distributed during <inline-formula> <tex-math notation="LaTeX">T_{\rm INT}</tex-math> </inline-formula> and accumulated from <inline-formula> <tex-math notation="LaTeX">T_{\rm OF}</tex-math> </inline-formula> to the end of <inline-formula> <tex-math notation="LaTeX">T_{\rm INT}</tex-math> </inline-formula> by reusing the counter. This only requires distribution of the <inline-formula> <tex-math notation="LaTeX">\phi_{\rm GCLK}</tex-math> </inline-formula> across the pixel array. Furthermore, seamless global shutter operation is realized through the use of two counters, which achieves a 100% temporal aperture for the X-ray photon. The proposed X-ray detector is implemented in a 1P5M 65-nm CMOS process. To be used for both medical diagnosis and industrial inspection, the pixel pitch is selected as 49.5 <inline-formula> <tex-math notation="LaTeX">\mu\text{m}</tex-math> </inline-formula>. The <inline-formula> <tex-math notation="LaTeX">400\ttimes 200</tex-math> </inline-formula> detector achieves a dynamic range (DR) of 113.3 dB, while consuming only 127.2 mW. Compared with previous X-ray detectors, the proposed detector exhibits a 24.9-dB improvement in DR.
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Leto | Faktor vpliva | Izdaja | Kategorija | Razvrstitev | ||||
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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