Our work is related to the liquid phase epitaxy-based development of new scintillating screens for high-resolution X-ray imaging. We successfully grew undoped and Tb, Eu and Ce-doped GdAlO 3 as well as Gd x Lu 1− x AlO 3 single crystalline films on YAlO 3 substrates. We studied crystallization conditions as a function of melt composition, growth temperature and lattice mismatch between the film and the substrate. The film composition was measured by using an electron microprobe and the morphology of the film surface was studied by scanning electron microscopy. X-Ray diffraction was used to characterize the crystal structure and the mismatch between the film and the substrate. In addition, the light yield of the Eu 3+ -doped films, as well as the obtained spatial resolution show that Gd x Lu 1− x AlO 3 may advantageously compete with existing thin film scintillators in particular energy ranges. High quality and dense GdLuAP:Eu scintillating screens have been successfully grown using liquid phase epitaxy showing superior imaging performances as compared the currently used GGG films.